Journal article
Charge trap levels in sulfur-doped chemical-vapor-deposited diamond with applications to ultraviolet dosimetry
E Trajkov, S Prawer, JE Butler, SM Hearne
JOURNAL OF APPLIED PHYSICS | AMER INST PHYSICS | Published : 2005
DOI: 10.1063/1.1984079
Abstract
Electrically active defects and traps in sulfur-doped polycrystalline diamond films synthesized by microwave-assisted chemical-vapor deposition are evaluated using thermally stimulated conductivity measurements after ultraviolet (UV) illumination. The measurements are found to be consistent with the latest theoretical predictions for the role of sulfur dopants in diamond. The suitability of S-doped diamond as a UV dosimeter is discussed. © 2005 American Institute of Physics.