Charge trap levels in sulfur-doped chemical-vapor-deposited diamond with applications to ultraviolet dosimetry

Abstract

Electrically active defects and traps in sulfur-doped polycrystalline diamond films synthesized by microwave-assisted chemical-vapor deposition are evaluated using thermally stimulated conductivity measurements after ultraviolet (UV) illumination. The measurements are found to be consistent with the latest theoretical predictions for the role of sulfur dopants in diamond. The suitability of S-doped diamond as a UV dosimeter is discussed. © 2005 American Institute of Physics.