Conduction mechanisms in ion-implanted and annealed polycrystalline CVD diamond

Abstract

The dark conduction properties of polycrystalline CVD diamond are investigated after ion implantation and subsequent annealing. The results are consistent with the model developed by Baskin et al. [E. Baskin, A. Reznik, D. Saada, Joan Adler, and R. Kalish, Phys. Rev. B 64 (2001) 224110.] which effectively describes the dark conduction mechanism in ion implanted single crystal diamond. Our results show that this model can be extended to polycrystalline diamond. © 2006 Elsevier B.V. All rights reserved.