Fabrication of single atom nanoscale devices by ion implantation

Abstract

Fabrication of nanoscale devices that exploit the rules of quantum mechanics to process information presents a formidable technical challenge because it will be necessary to control quantum states at the level of individual atoms, electrons or photons. We have developed a pathway to the construction of quantum devices using ion implantation and demonstrate, using charge transport analysis, that the devices exhibit single electron effects. We construct devices that employ two P donors in Si by employing the technique of Ion Beam Induced Charge (IBIC) in which single 14 keV P ions can be implanted into ultra-pure silicon by monitoring on-substrate detector electrodes. We have used IBIC with a ..