Integration of single ion implantation method in focused ion beam system for nanofabrication

Abstract

A method of single ion implantation based on the online detection of individual ion impacts on a pure silicon substrate has been implemented in a Focused Ion Beam (FIB) System. The optimized silicon detector integrated with a state-of-art low noise electronic system and operated at a low temperature makes it possible to achieve single ion detection with a minimum energy detection limit about 1 to 3.5 keV in a FIB chamber. The method of single ion implantation is compatible with a nanofabrication process. The lateral positioning of the implantation sites are controlled to nanometer accuracy (∼5 nm) using nanofabricated PMMA masks. The implantation depth is controlled by tuning the single ion ..