Electrically detected magnetic resonance in ion-implanted Si : P nanostructures
DR McCamey, H Huebl, MS Brandt, WD Hutchison, JC McCallum, RG Clark, AR Hamilton
APPLIED PHYSICS LETTERS | AMER INST PHYSICS | Published : 2006
The authors present the results of electrically detected magnetic resonance (EDMR) experiments on ion-implanted Si:P nanostructures at 5 K, consisting of high-dose implanted metallic leads with a square gap, in which phosphorus is implanted at a nonmetallic dose corresponding to 1017 cm-3. By restricting this secondary implant to a 100×100 nm2 region, the EDMR signal from less than 100 donors is detected. This technique provides a pathway to the study of single donor spins in semiconductors, which is relevant to a number of proposals for quantum information processing. © 2006 American Institute of Physics.