Ultrathin continuous undoped diamond films: Investigation of nanoscale conduction properties

Abstract

Using a specialized ultrasonic seeding technique to produce very high diamond nucleation density (>1010 cm-2), ultrathin, continuous, polycrystalline films of thickness from 70 to 100 nm were deposited onto silicon substrates. Raman spectroscopy revealed these films to be of high quality, with a clear peak at 1332 cm-1 and also a peak at 1140 cm-1. These ultrathin films display excellent electron emission properties. The nanoscale electrical properties of the films were investigated as a function of film thickness and temperature by conducting probe atomic force microscopy (CP-AFM) to reveal the nature of the electrically conducting pathways in the films. Images of current distribution of th..