Si-doped luminescence gratings

Abstract

We report on the fabrication of ordered arrays of dots formed by Si implantation through a grid into SiO2 using the Bochum high-energy ion projector. Arrays of Si-implanted dots with dimensions in the micrometer and submicrometer range have been made. The samples show a strong red photoluminescence at room temperature. By the combination of μ-photoluminescence measurements and atomic force microscopy investigations optical and structural characterization of the produced structures was possible. Additional investigations by high-resolution transmission electron microscopy, X-ray diffraction and temperature-dependent photoluminescence on conventionally implanted samples have been performed for..