TCAD modeling of ion beam induced charge collection in silicon Schottky barrier devices

Abstract

The Technology Computer Aided Design (TCAD) package is employed to quantitatively model ion beam induced charge (IBIC) experiments. TCAD can be used even in cases where the interaction of the ion with the semiconductor significantly perturbs the electric field in the semiconductor (i.e. funneling) where conventional analytical models for calculating the IBIC signal are not applicable. In this paper we present the results of modeling of IBIC experiments of well-specified Schottky barrier devices fabricated on phosphorus doped silicon, with a resistivity of 10 Ωcm. The IBIC pulse height spectrum, obtained with a 2 MeV He microprobe, is compared with 2-D TCAD simulation models. This allows key ..