Radiation damage on 6H-SiC Schottky diodes

Abstract

The radiation damage production rate in SiC Schottky diodes was studied by measuring the ion beam induced charge (IBIC) from a 2 MeV He+ ion microbeam. Two 30 μm diameter SiC Schottky diodes with a Ni Schottky contact were fabricated on 5 μm thick epilayers of both n-type and p-type 6H-SiC. An area of 10 μm × 10 μm on each Schottky diode was irradiated by a scanned 2 MeV He+ ion beam focused to less than 1 μm in diameter with a dose range from 1 × 109 to 1 × 1013 ions/cm2. Before and after He+ ion beam irradiation, IBIC spectra were measured at the irradiated area. From these spectra, the relationship between the IBIC peak shift and the He+ ion beam dose was measured. For the n-type and p-ty..