Journal article
Nonlinear hole transport through a submicron-size channel
O Makarovsky, A Neumann, AM Martin, L Turyanska, A Patanè, L Eaves, M Henini, PC Main, S Thoms, CDW Wilkinson, DK Maude, JC Portal
Applied Physics Letters | AMER INST PHYSICS | Published : 2003
DOI: 10.1063/1.1543643
Abstract
Non linear hole transport through a submicron-size channel was investigated. The channel was fabricated from a modulation-doped p-type GaAs/(AlGa)As single-quantum-well heterostructure. It was showed that the holes can be accelerated beyond the inflection point of the lowest energy subband dispersion curve by the intense electric field in the channel.