Journal article

Angular dependence of defect formation in H-implanted silicon studied using deep level transient spectroscopy

BJ Villis, JC McCallum

Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms | ELSEVIER SCIENCE BV | Published : 2007

DOI: 10.1016/j.nimb.2007.01.116

University of Melbourne Researchers

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Keywords

Hydrogen
Physical Sciences
Ion Channeling
Physics
Implantation-Induced Defects
Physics, Nuclear
Science & Technology
Technology
Silicon
Deep Level Transient Spectroscopy
Instruments & Instrumentation
Physics, Atomic, Molecular & Chemical
Nuclear Science & Technology
Ion Implantation