Angular dependence of defect formation in H-implanted silicon studied using deep level transient spectroscopy

Abstract

In this paper, we present preliminary results of a deep level transient spectroscopy study of the charge traps produced as a function of implantation angle for 70 keV H ions implanted into n-type Si(1 0 0) crystals. The defect types, concentrations and their depth profiles are examined as a function of implantation angle. The experimental results are also compared to the vacancy profiles predicted by the Monte-Carlo binary collision code, Crystal-TRIM. The results of this light ion study are compared and contrasted with those of previous studies. © 2007 Elsevier B.V. All rights reserved.