The response of silicon detectors to low-energy ion implantation
T Hopf, C Yang, SE Andresen, DN Jamieson
JOURNAL OF PHYSICS-CONDENSED MATTER | IOP PUBLISHING LTD | Published : 2008
Studies of electrical transients in single-crystal silicon induced by discrete low-energy (sub-20 keV) ions have been carried out at 90 K, with ionization measurements and damage accumulation in the sample being investigated. Ionization studies reveal a discrepancy between experimental results and predictions from the widely used SRIM (stopping and range of ions in matter) code, one which increases with decreasing energy: a result which has previously been suggested from studies with continuous ion beams. Damage accumulation studies of the sample also demonstrate that current models of damage build-up in silicon are inadequate at such low energies, with experiments indicating that individual..View full abstract
Awarded by Army Research Office (ARO)
This work is supported by the Australian Research Council, the Australian Government and by the US National Security Agency (NSA), Advanced Research and Development Activity (ARDA) and the Army Research Office (ARO) under Contract Number DAAD19-01-1-0653. Financial support was also provided by the David Hay Memorial Fund. We are grateful to Alberto Cimmino for expert assistance with operation of our 14 keV implantation system, Eric Gauja for the skilled fabrication of the detectors we used in this study and to Andrew Dzurak and Steven Prawer for useful discussions.