Simulation of impulse response degradation from irradiation induced trapping and recombination regions in an InGaAs on InP photodetector

Abstract

Degradation in the pulsed responsivity of an In0.53 Ga0.47 As on InP p-i-n photodiode due to high-energy particle irradiation induced trapping and recombination centers is simulated using quasi-three-dimensional iterative solutions to the drift-diffusion and Poisson equation in the presence of generation-recombination terms. Device physics models necessary to simulate a realistic device are discussed, and the impulse response as a function of trap density is reported for defects uniformly distributed in the InGaAs region. At high trap densities, a sharp decrease in the pulsed responsivity and an increase in dark current can be correlated with the formation of a double-field profile similar t..