Journal article

Simulation of impulse response degradation from irradiation induced trapping and recombination regions in an InGaAs on InP photodetector

Jamie S Laird, Shinobu Onoda, Toshio Hirao, Hidenori Ohyama

JOURNAL OF APPLIED PHYSICS | AMER INST PHYSICS | Published : 2008

Abstract

Degradation in the pulsed responsivity of an In0.53 Ga0.47 As on InP p-i-n photodiode due to high-energy particle irradiation induced trapping and recombination centers is simulated using quasi-three-dimensional iterative solutions to the drift-diffusion and Poisson equation in the presence of generation-recombination terms. Device physics models necessary to simulate a realistic device are discussed, and the impulse response as a function of trap density is reported for defects uniformly distributed in the InGaAs region. At high trap densities, a sharp decrease in the pulsed responsivity and an increase in dark current can be correlated with the formation of a double-field profile similar t..

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University of Melbourne Researchers