A 60-GHz Direct-Conversion Transmitter in 130-nm CMOS
F Zhang, B Yang, BN Wicks, Z Liu, CM Ta, Y Mo, K Wang, G Felic, P Nadagouda, T Walsh, W Shieh, I Mareels, RJ Evans, E Skafidas
2008 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE | IEEE | Published : 2008
This paper describes the system architecture and design procedure for a 60-GHz transmitter in 130-nm CMOS process. The transmitter achieves a saturation power output of better than 4 dBm and an output-referred 1-dB compression point of 2 dBm. The LO to RF port isolation is better than 27 dB from 57 to 65 GHz. To the best of the authors' knowledge, this is the first reported 60-GHz transmitter in 130-nm CMOS that incorporates on-chip filtering. © 2008 IEEE.