Conference Proceedings
A 60-GHz direct-conversion transmitter in 130-nm CMOS
F Zhang, B Yang, BN Wicks, Z Liu, CM Ta, Y Mo, K Wang, G Felic, P Nadagouda, T Walsh, W Shieh, I Mareels, RJ Evans, E Skafidas
Proceedings of 2008 IEEE Asian Solid State Circuits Conference A Sscc 2008 | IEEE | Published : 2008
Abstract
This paper describes the system architecture and design procedure for a 60-GHz transmitter in 130-nm CMOS process. The transmitter achieves a saturation power output of better than 4 dBm and an output-referred 1-dB compression point of 2 dBm. The LO to RF port isolation is better than 27 dB from 57 to 65 GHz. To the best of the authors' knowledge, this is the first reported 60-GHz transmitter in 130-nm CMOS that incorporates on-chip filtering. © 2008 IEEE.