Effective photoluminescence modification of ZnO nanocombs by plasma immersion ion implantation
Y Yang, BK Tay, XW Sun, ZJ Han, ZX Shen, C Lincoln, T Smith
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1-3 | IEEE | Published : 2008
Surface defects passivation of ZnO nanocombs was performed through a Ti plasma immersion ion implantation (PIII) with low bias voltages ranging from 0-10 kV. The room temperature near-band-edge emission was enhanced for modified ZnO nanostructures while the defect-related green band was completely quenched. Detailed temperature dependence PL revealed that the deep-level emissions were surface related and it was the most affected recombination processes by PIII, whereas the surface exciton related emission was slowly quenched as the ion energy increased. Time-resolved PL shows that the lifetime of the UV emission has been enhanced whereas the long lifetime of visible emission of the untreated..View full abstract
Awarded by Nanyang Technological University
Awarded by Science and Engineering Research Council
The sponsorships from Research Grant Manpower Fund (RGM 21/04) of Nanyang Technological University, and Science and Engineering Research Council Grant (#0421010010) from Agency for Science, Technology and Research (A * STAR), Singapore are gratefully acknowledged.