Conference Proceedings

Effective photoluminescence modification of ZnO nanocombs by plasma immersion ion implantation

Y Yang, BK Tay, XW Sun, ZJ Han, ZX Shen, C Lincoln, T Smith

2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1-3 | IEEE | Published : 2008

Abstract

Surface defects passivation of ZnO nanocombs was performed through a Ti plasma immersion ion implantation (PIII) with low bias voltages ranging from 0-10 kV. The room temperature near-band-edge emission was enhanced for modified ZnO nanostructures while the defect-related green band was completely quenched. Detailed temperature dependence PL revealed that the deep-level emissions were surface related and it was the most affected recombination processes by PIII, whereas the surface exciton related emission was slowly quenched as the ion energy increased. Time-resolved PL shows that the lifetime of the UV emission has been enhanced whereas the long lifetime of visible emission of the untreated..

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University of Melbourne Researchers

Grants

Awarded by Nanyang Technological University


Awarded by Science and Engineering Research Council


Funding Acknowledgements

The sponsorships from Research Grant Manpower Fund (RGM 21/04) of Nanyang Technological University, and Science and Engineering Research Council Grant (#0421010010) from Agency for Science, Technology and Research (A * STAR), Singapore are gratefully acknowledged.