Effective photoluminescence modification of ZnO nanocombs by plasma immersion ion implantation

Abstract

Surface defects passivation of ZnO nanocombs was performed through a Ti plasma immersion ion implantation (PIII) with low bias voltages ranging from 0-10 kV. The room temperature near-band-edge emission was enhanced for modified ZnO nanostructures while the defect-related green band was completely quenched. Detailed temperature dependence PL revealed that the deep-level emissions were surface related and it was the most affected recombination processes by PIII, whereas the surface exciton related emission was slowly quenched as the ion energy increased. Time-resolved PL shows that the lifetime of the UV emission has been enhanced whereas the long lifetime of visible emission of the untreated..