Structural order in oxygenated gallium nitride films

Abstract

Structural order in nanocrystalline, oxygenated GaN thin films (thickness ∼ 500 nm) has been examined. The films were grown using low-pressure chemical vapor deposition of (CH3)2GaN3 single source precursor. During deposition, residual oxygen from the vacuum environment was incorporated into the films. Photoemission spectroscopy indicated that oxygen mainly substituted nitrogen during deposition. Long-range X-ray diffraction indicated that the films were oriented along the hexagonal (002) direction when the incorporated concentration of oxygen was lower than 25 atomic % (at. %). Above this, the films were amorphous. The results of angle-dependent near-edge X-ray absorption fine structure fac..