Journal article

Electrostatically defined few-electron double quantum dot in silicon

WH Lim, H Huebl, LH Willems van Beveren, S Rubanov, PG Spizzirri, SJ Angus, RG Clark, AS Dzurak

Applied Physics Letters | AMER INST PHYSICS | Published : 2009

Abstract

A few-electron double quantum dot was fabricated using metal-oxide- semiconductor-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is electrically tunable, enabling the interdot coupling to be adjusted over a wide range, as observed in the charge stability diagram. Resonant single-electron tunneling through ground and excited states of the double dot was clearly observed in bias spectroscopy measurements. © 2009 American Institute of Physics.

Grants

Awarded by U.S. Army Research Office


Funding Acknowledgements

The authors thank D. Barber and R. P. Starrett, and E. Gauja for technical support, C. C. Escott, K. W. Chan, and H. Yang for the help with the FASTCAP modeling, and M. A. Eriksson, F. A. Zwanenburg, and L. D. Macks for helpful comments with the manuscript. This work was supported by the Australian Research Council, the Australian Government, and by the U.S. National Security Agency and U.S. Army Research Office (under Contract No. W911NF-04-1-0290).