Electrostatically defined few-electron double quantum dot in silicon
WH Lim, H Huebl, LH Willems van Beveren, S Rubanov, PG Spizzirri, SJ Angus, RG Clark, AS Dzurak
Applied Physics Letters | AMER INST PHYSICS | Published : 2009
A few-electron double quantum dot was fabricated using metal-oxide- semiconductor-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is electrically tunable, enabling the interdot coupling to be adjusted over a wide range, as observed in the charge stability diagram. Resonant single-electron tunneling through ground and excited states of the double dot was clearly observed in bias spectroscopy measurements. © 2009 American Institute of Physics.
Awarded by U.S. Army Research Office
The authors thank D. Barber and R. P. Starrett, and E. Gauja for technical support, C. C. Escott, K. W. Chan, and H. Yang for the help with the FASTCAP modeling, and M. A. Eriksson, F. A. Zwanenburg, and L. D. Macks for helpful comments with the manuscript. This work was supported by the Australian Research Council, the Australian Government, and by the U.S. National Security Agency and U.S. Army Research Office (under Contract No. W911NF-04-1-0290).