Comparative analysis of Ti3SiC2 and associated compounds using x-ray diffraction and x-ray photoelectron spectroscopy

Abstract

Ti3SiC2 exhibits a unique combination of ceramic and metallic properties suitable for both electrical and mechanical application. With high-temperature stability, high electrical and thermal conductivity and resistance to oxidation, Ti3SiC2 has proven promising as a contact layer for high power SiC semiconductors. However, until recently, synthesis of this material has proven difficult without appreciable quantities (<2 vol%) of impurity phases, namely TiC1-x and Ti5Si3Cx. As such, many properties of this compound are as yet unknown. In this paper, a comparable analysis of Ti3SiC2 and associated compounds, TiC and Ti5Si3Cx has been performed using both x-ray diffraction (XRD) and x-ray photo..