Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon

Abstract

We describe a method to control and detect in single shot the electron spin state of an individual donor in silicon with greatly enhanced sensitivity. A silicon-based single-electron transistor (SET) allows for spin-dependent tunneling of the donor electron directly into the SET island during the readout phase. Simulations show that the charge transfer signals are typically Δq≳0.2e -over an order of magnitude larger than achievable with metallic SETs on the SiO2 surface. A complete spin-based qubit structure is obtained by adding a local electron spin resonance line for coherent spin control. This architecture is ideally suited to demonstrate and study the coherent properties of donor electr..