Journal article

Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon

A Morello, CC Escott, H Huebl, LH Willems van Beveren, LCL Hollenberg, DN Jamieson, AS Dzurak, RG Clark

PHYSICAL REVIEW B | AMER PHYSICAL SOC | Published : 2009

Abstract

We describe a method to control and detect in single shot the electron spin state of an individual donor in silicon with greatly enhanced sensitivity. A silicon-based single-electron transistor (SET) allows for spin-dependent tunneling of the donor electron directly into the SET island during the readout phase. Simulations show that the charge transfer signals are typically Δq≳0.2e -over an order of magnitude larger than achievable with metallic SETs on the SiO2 surface. A complete spin-based qubit structure is obtained by adding a local electron spin resonance line for coherent spin control. This architecture is ideally suited to demonstrate and study the coherent properties of donor electr..

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Grants

Awarded by U. S. Army Research Office


Funding Acknowledgements

This work was funded by the Australian Research Council, the Australian Government, the U. S. National Security Agency, and the U. S. Army Research Office under Contract No. W911NF-08-1-0527.