Journal article

Intrinsic and boron-enhanced hydrogen diffusion in amorphous silicon formed by ion implantation

BC Johnson, JC McCallum, AJ Atanacio, KE Prince

Applied Physics Letters | AMER INST PHYSICS | Published : 2009

Grants

Awarded by Australian Institute of Nuclear Science and Engineering


Funding Acknowledgements

The Department of Electronic Materials Engineering at the Australian National University is acknowledged for providing access to ion implanting facilities. This work was supported by grants from the Australian Research Council and the Australian Institute of Nuclear Science and Engineering (Award No. AINGRA08035).