Intrinsic and boron-enhanced hydrogen diffusion in amorphous silicon formed by ion implantation
BC Johnson, JC McCallum, AJ Atanacio, KE Prince
Applied Physics Letters | AMER INST PHYSICS | Published : 2009
Awarded by Australian Institute of Nuclear Science and Engineering
The Department of Electronic Materials Engineering at the Australian National University is acknowledged for providing access to ion implanting facilities. This work was supported by grants from the Australian Research Council and the Australian Institute of Nuclear Science and Engineering (Award No. AINGRA08035).