Journal article
Near coalescent submicron polycrystalline diamond films deposited on silicon: Hydrogen bonding and thermal enhanced carbide formation
A Stacey, Sh Michaelson, J Orwa, S Rubanov, S Prawer, BCC Cowie, A Hoffman
JOURNAL OF APPLIED PHYSICS | AMER INST PHYSICS | Published : 2009
DOI: 10.1063/1.3257255
Abstract
The influence of high temperature annealing up to 1200 °C in vacuum on ∼100 nm nearly continuous thick diamond films consisting of 30-50 nm crystallites, deposited onto silicon substrates is reported. The hydrogen bonding and phase composition of the films were studied with Raman spectroscopy, while the surface microstructure and composition were studied with high resolution scanning electron microscopy (SEM), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS), respectively. Annealing to 800-900 °C of ∼100 nm thick films results in a decrease in the intensities of the peaks associated with hydrogen bonding (Raman), as well as changes to the morphological micro..
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Funding Acknowledgements
This research project was carried out with the financial support of the Israeli Academy of Science and Arts and the Technion Fund for promotion of research. A.H. is an international research fellow of the Australian Research Council. Part of this research was undertaken on the soft x-ray beamline at the Australian Synchrotron, Victoria Australia.