Journal article
Probe and control of the reservoir density of states in single-electron devices
M Möttönen, KY Tan, KW Chan, FA Zwanenburg, WH Lim, CC Escott, JM Pirkkalainen, A Morello, C Yang, JA Van Donkelaar, ADC Alves, DN Jamieson, LCL Hollenberg, AS Dzurak
Physical Review B Condensed Matter and Materials Physics | Published : 2010
Abstract
We present a systematic study of the density of states (DOS) in electron accumulation layers near a Si-SiO2 interface. In the experiments we have employed two conceptually different objects to probe DOS, namely, a phosphorus donor and a quantum dot, both operating in the single-electron tunneling regime. We demonstrate how the peaks in reservoir DOS can be moved in the transport window independently of the other device properties. This method introduces a fast and convenient way of identifying excited states in these emerging nanostructures. © 2010 The American Physical Society.
Grants
Awarded by U.S. Army Research Office (USARO)
Funding Acknowledgements
The authors thank F. Hudson, D. Barber, and R. P. Starrett for technical support, E. Gauja, A. Cimmino, and R. Szymanska for assistance in nanofabrication, and M. A. Eriksson, J. P. Pekola, and V. Pietil for insightful discussions. M. M. and J.-M. P. acknowledge Academy of Finland, Emil Aaltonen Foundation, and Finnish Cultural Foundation for financial support. This work was supported by the Australian Research Council, the Australian Government, the U.S. National Security Agency (NSA), and the U.S. Army Research Office (USARO) (under Contract No. W911NF-08-1-0527)