Journal article

Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation

BC Johnson, GC Tettamanzi, ADC Alves, S Thompson, C Yang, J Verduijn, JA Mol, R Wacquez, M Vinet, M Sanquer, S Rogge, DN Jamieson

APPLIED PHYSICS LETTERS | AMER INST PHYSICS | Published : 2010

Abstract

We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single atom degrees of freedom. The two main ion stopping processes that induce drain current modulation are examined. We employ 500 keV He ions, in which electronic stopping is dominant, leading to discrete increases in drain current and 14 keV P dopants for which nuclear stopping is dominant leading to discrete decreases in drain current. © 2010 American Ins..

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Grants

Awarded by EC


Funding Acknowledgements

The authors acknowledge financial support from the EC FP7 FET-proactive NanoICT under Project Nos. MOLOC (215750) and AFSiD (214989) and the Dutch Fundamenteel Onderzoek der Materie FOM.