Journal article

Hydrogen refinement during solid phase epitaxy of buried amorphous silicon layers

DJ Pyke, JC McCallum, BC Johnson

JOURNAL OF APPLIED PHYSICS | AMER INST PHYSICS | Published : 2010

Abstract

The effect of hydrogen on the kinetics of solid phase epitaxy (SPE) have been studied in buried amorphous Si layers. The crystallization rate of the front amorphous/crystalline (a/c) interface is monitored with time resolved reflectivity. Secondary ion mass spectrometry (SIMS) is used to examine H implanted profiles at selected stages of the anneals. The H retardation of the SPE rate is determined up to a H concentration of 2.3× 1020 cm -3 where the SPE rate decreases by 80%. Numerical simulations are performed to model the H diffusion, the moving a/c interfaces and the refinement of the H profile at these interfaces. Despite the high H concentration involved, a simple Fickian diffusion mode..

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Funding Acknowledgements

The authors would like to thank the Department of Electronic Engineering, ANU, for providing access to ion implantation facilities and Bianca Haberl for the TEM analysis. This research was supported by a grant from the Australian Research Council.