Hydrogen refinement during solid phase epitaxy of buried amorphous silicon layers
DJ Pyke, JC McCallum, BC Johnson
JOURNAL OF APPLIED PHYSICS | AMER INST PHYSICS | Published : 2010
The effect of hydrogen on the kinetics of solid phase epitaxy (SPE) have been studied in buried amorphous Si layers. The crystallization rate of the front amorphous/crystalline (a/c) interface is monitored with time resolved reflectivity. Secondary ion mass spectrometry (SIMS) is used to examine H implanted profiles at selected stages of the anneals. The H retardation of the SPE rate is determined up to a H concentration of 2.3× 1020 cm -3 where the SPE rate decreases by 80%. Numerical simulations are performed to model the H diffusion, the moving a/c interfaces and the refinement of the H profile at these interfaces. Despite the high H concentration involved, a simple Fickian diffusion mode..View full abstract
The authors would like to thank the Department of Electronic Engineering, ANU, for providing access to ion implantation facilities and Bianca Haberl for the TEM analysis. This research was supported by a grant from the Australian Research Council.