Journal article

Overlapping-gate architecture for silicon Hall bar field-effect transistors in the low electron density regime

LH Willems van Beveren, KY Tan, NS Lai, AS Dzurak, AR Hamilton

Applied Physics Letters | AMER INST PHYSICS | Published : 2010

University of Melbourne Researchers


Awarded by U.S. Army Research Office

Awarded by ARC APF

Awarded by Grants-in-Aid for Scientific Research

Funding Acknowledgements

The authors wish to thank D. Barber for assistance and acknowledge support from the Australian Research Council (ARC), the Australian Government, the U.S. National Security Agency, and the U.S. Army Research Office under Contract No. W911NF-08-1-0527. A.R.H. acknowledges support from an ARC APF Grant No. DP0772946.