Journal article
Overlapping-gate architecture for silicon Hall bar field-effect transistors in the low electron density regime
LH Willems van Beveren, KY Tan, NS Lai, AS Dzurak, AR Hamilton
Applied Physics Letters | AMER INST PHYSICS | Published : 2010
DOI: 10.1063/1.3501136
Grants
Awarded by U.S. Army Research Office
Awarded by ARC APF
Funding Acknowledgements
The authors wish to thank D. Barber for assistance and acknowledge support from the Australian Research Council (ARC), the Australian Government, the U.S. National Security Agency, and the U.S. Army Research Office under Contract No. W911NF-08-1-0527. A.R.H. acknowledges support from an ARC APF Grant No. DP0772946.