Conference Proceedings
Deep-level transient spectroscopy study of channelled boron implantation in silicon
L Deam, BC Johnson, JC McCallum
Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings COMMAD | IEEE | Published : 2010
Abstract
Boron ions will be implanted at 150 keV down the axis of n-type silicon. Deep-level transient spectroscopy will be used to study the range, concentration and species of the created defects. A comparison to crystal-TRIM results will be made in order to refine model parameters. © 2010 IEEE.
Grants
Funding Acknowledgements
The Department of Electronic Materials Engineering at the Australian National University is acknowledged for their support by providing access to ion implanting facilities. This work is supported by a grant from the Australian Research Council.