Deep-level transient spectroscopy study of channelled boron implantation in silicon
L Deam, BC Johnson, JC McCallum
Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings | IEEE | Published : 2010
The Department of Electronic Materials Engineering at the Australian National University is acknowledged for their support by providing access to ion implanting facilities. This work is supported by a grant from the Australian Research Council.