Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon

Abstract

The presence of boron in silicon has been shown to have a deleterious effect on the luminescence of interstitial-related centres, particularly the W-centre which is often observed after ion implantation and a low temperature anneal. Competition between silicon-interstitial and boron-interstitial centre formation is considered to be a possible mechanism underlying this dramatic reduction. Previous work on silicon implantation of boron-doped substrates is extended to examine the effect of B implantation itself on W-centre formation. W centres formed via the implantation of B and a low temperature anneal and via a Si implant over an activated B-implant profile followed by low temperature anneal..