Journal article

Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon

JC McCallum, BJ Villis, BC Johnson, N Stavrias, JE Burgess, S Charnvanichborikarn, J Wong-Leung, JS Williams, C Jagadish

Physica Status Solidi. A: Applications and Materials Science | WILEY-V C H VERLAG GMBH | Published : 2011