Journal article
Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation
BC Johnson, B Haberl, JE Bradby, JC McCallum, JS Williams
Physical Review B Condensed Matter and Materials Physics | Published : 2011
Abstract
A micro-Raman scattering study on the linewidth and frequency shift of Si-III and Si-XII produced by indentation is presented over the temperature range 80-300 K. Measurements are compared to the Raman lines originating from the Si-I substrate. The main Si-XII Raman line shows a strong dependence on temperature and can be adequately described by anharmonic terms from the phonon proper self-energy. In contrast, the main Si-III Raman linewidth decreases with increasing temperature. A model related to electron-phonon interactions describes the data well. © 2011 American Physical Society.
Grants
Funding Acknowledgements
This work is supported by a grant from the Australian Research Council. J.E.B. gratefully acknowledges ARC QEII for financial support.