Ion implantation in diamond using 30 keV Ga focused ion beam

Abstract

Focused ion beam (FIB) technique is a well established technique for processing and modifying materials at micro- and nanoscale. FIB implantation with 30 keV Ga+ ions into a single crystal diamond has been studied via a combination of transmission electron microscopy (TEM) imaging and spectroscopy in the attempt to understand the damage formation in diamond. The damage formation has been studied as a function of implantation dose with eight different doses ranging from 6 × 1014 to 1 × 10 16 ions/cm2. The TEM studies have revealed different structure of low-dose and high-dose implanted regions. 3.5 nm diamond cap layer was observed in the low-dose implanted layer. TEM analysis has shown volum..