Effect of annealing on the structural, electrical and magnetic properties of Gd-implanted ZnO thin films

Abstract

We report the results from structural, electrical and magnetic measurements on Gd-implanted ion beam deposited zinc oxide (ZnO) films. 40 keV Gd ions were implanted into 150 nm thick ZnO films with fluence 2.8 × 10 15 cm -2. RBS spectra reveal the implanted atoms are located in the near-surface region in as-implanted and up to 923 K annealed films, diffusing deeper into the films after 1073 K annealing. SEM images show that the average grain size increases from 10 to 30 nm upon annealing. High-resolution and energy-filtered transmission electron microscopy of a ZnO:Gd sample annealed at 923 K reveal the presence of Gd-rich regions in the film, but no evidence of pure Gd precipitates. Anneali..