Journal article

Complementary Metal Oxide Semiconductor Technology With and On Paper

Rodrigo Martins, Arokia Nathan, Raquel Barros, Luis Pereira, Pedro Barquinha, Nuno Correia, Ricardo Costa, Arman Ahnood, Isabel Ferreira, Elvira Fortunato

Advanced Materials | WILEY-V C H VERLAG GMBH | Published : 2011

Abstract

A complementary metal oxide semiconductor (CMOS) device is described. The device is based on n-(In-Ga-Zn-O) and p-type (SnO ) active oxide semiconductors and uses a transparent conductive oxide (In-Zn-O) as gate electrode that sits on a flexible, recyclable paper substrate that is simultaneously the substrate and the dielectric. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. x

University of Melbourne Researchers

Grants

Awarded by Portuguese Science Foundation


Awarded by ERC


Awarded by APPLE


Funding Acknowledgements

This work was funded by the Portuguese Science Foundation (FCT-MCTES) through projects PTDC/CTM/103465/2008, PTDC/EEA-ELC/099490/2008, E. Fortunato's ERC 2008 Advanced Grant (INVISIBLE contract number 228144), APPLE" FP7-NMP-2010-SME/262782-2 and a Royal Society Wolfson Research Award to A. N.