Complementary Metal Oxide Semiconductor Technology With and On Paper
Rodrigo Martins, Arokia Nathan, Raquel Barros, Luis Pereira, Pedro Barquinha, Nuno Correia, Ricardo Costa, Arman Ahnood, Isabel Ferreira, Elvira Fortunato
Advanced Materials | WILEY-V C H VERLAG GMBH | Published : 2011
A complementary metal oxide semiconductor (CMOS) device is described. The device is based on n-(In-Ga-Zn-O) and p-type (SnO ) active oxide semiconductors and uses a transparent conductive oxide (In-Zn-O) as gate electrode that sits on a flexible, recyclable paper substrate that is simultaneously the substrate and the dielectric. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. x
Awarded by Portuguese Science Foundation
Awarded by ERC
Awarded by APPLE
This work was funded by the Portuguese Science Foundation (FCT-MCTES) through projects PTDC/CTM/103465/2008, PTDC/EEA-ELC/099490/2008, E. Fortunato's ERC 2008 Advanced Grant (INVISIBLE contract number 228144), APPLE" FP7-NMP-2010-SME/262782-2 and a Royal Society Wolfson Research Award to A. N.