Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon
BC Johnson, BJ Villis, JE Burgess, N Stavrias, JC McCallum, S Charnvanichborikarn, J Wong-Leung, C Jagadish, JS Williams
Journal of Applied Physics | AMER INST PHYSICS | Published : 2012
Awarded by Japan Society for the Promotion of Science (JSPS)
This work is supported by a grant from the Australian Research Council. B.C.J. is partially supported by the Japan Society for the Promotion of Science (JSPS) (Grant-in-aid for Scientific Research, 22.00802).