Boron Enhanced H Diffusion in Amorphous Si Formed by Ion Implantation
Brett C Johnson, Armand J Atanacio, Kathryn E Prince, Jeffrey C McCallum, BJ Pawlak, ML Pelaz, M Law, K Suguro
Materials Research Society Symposium Proceedings | MATERIALS RESEARCH SOC | Published : 2008
Awarded by Australian Institute of Nuclear Science and Engineering
The Department of Electronic Materials Engineering at the Australian National University is acknowledged for their support by providing access to ion implanting facilities. This work was supported by a grant from the Australian Research Council. The authors would like to thank the Australian Institute of Nuclear Science and Engineering for providing financial assistance (Award No AINGRA08035) to enable work on the SIMS to be conducted.