Applications of MeV ion microbeams to the analysis of single-crystal materials

Abstract

This paper reviews the applications of focused MeV ion beams to the analysis of single-crystal semiconductor and other technological materials. The use of ion channeling to provide images of crystal quality and information about atom location is emphasized. The limitations that ion damage imposes on the accuracy of such analyses are discussed in the light of several recent studies of the damage produced by ion microbeams in a variety of single-crystal materials. © 1991.