Journal article
2 MeV He microbeam damage in Si and GaAs
RA Brown, JC McCallum, JS Williams
Nuclear Inst and Methods in Physics Research B | ELSEVIER SCIENCE BV | Published : 1991
Abstract
The effects of 2 MeV He microbeam bombardment of Si and GaAs single crystals are presented. Preferential dopant displacement and modification of host crystal structure can occur under typical operating conditions used in microbeam systems. The effects of dose, dose rate and channeling/random beam alignment are discussed. The results of this study provide guidelines to the practical limitations of microbeams for analysis of these materials. © 1991.