Conference Proceedings
Full-band study of ultra-thin Si:P nanowires
H Ryu, S Lee, YHM Tan, B Weber, S Mahapatra, MY Simmons, LCL Hollenberg, G Klimeck
2012 15th International Workshop on Computational Electronics Iwce 2012 | IEEE | Published : 2012
Abstract
Metallic property and Ohmic conduction in densely phosphorus δ-doping ultra-thin silicon nanowires (Si:P NWs) are studied. A 10-band sp 3 d 5 s* tight-binding approach is used to describe device electronic structures atomistically. Electrostatics at equilibrium are self-consistently calculated with our in-house 3-D parallel Schrödinger- Poisson solver that is coupled to the Local Density Approximation to consider the electron exchange-correlation in simulations. We not only confirm the NW channel is metallic by calculating the equilibrium bandstructure of a 1.5nm wide and 1/4 atomic monolayer doping [110] Si:P NW, but also provide a strong connection to experiment by calculating ohmic conduc..
View full abstractGrants
Awarded by US National Science Foundation (NSF)
Awarded by Army Research Office
Awarded by Australian Research Council (ARC) Centre of Excellence for Quantum Computation and Communication Technology
Awarded by Ministry of Education, Science and Technology, Republic of Korea
Funding Acknowledgements
This research was conducted using the nanoHUB.org computing resources operated by the Network for Computational Nanotechnology funded by the US National Science Foundation (NSF) (EEC-0228390), and the financial support from the US NSF (OCI-0749140), the US National Security Agency, the Army Research Office (W911NF-08-1-0527), and the Australian Research Council (ARC) Centre of Excellence for Quantum Computation and Communication Technology (CE110001027). H. Ryu, S. Lee and G. Klimeck acknowledge the extensive use of computing resources provided by the TeraGrid computing resources supported by the US National Institute for Computational Sciences, and the Texas Advanced Computing Center. H. Ryu acknowledges the support from the EDucation-research Integration through Simulation On the Net (EDISON) project funded by the Ministry of Education, Science and Technology, Republic of Korea (N-11-NM-IR11). M. Y. Simmons acknowledges an ARC Federation Fellowship and support from the US Semiconductor Research Corporation. L. C. L. Hollenberg is supported under an ARC Professorial Fellowship