Spectroscopy of a deterministic single-donor device in silicon

Abstract

We present a single electron transistor (SET) based on an individual phosphorus dopant atom in an epitaxial silicon environment. Using scanning tunneling microscope (STM) hydrogen lithography the single impurity is deterministically placed with a spatial accuracy of ±1 lattice site within a donor-based transport device. Low temperature transport measurements confirm the presence of the single donor and show that the donor charge state can be precisely controlled via gate voltages. We observe a charging energy that is remarkably similar to the value expected for isolated P donors in bulk silicon, which is in sharp contrast to previous experiments on single-dopant transport devices. We show th..