Conference Proceedings
Ion-implantation and analysis for doped silicon slot waveguides
L Deam, N Stavrias, KK Lee, JC McCallum
Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings COMMAD | IEEE | Published : 2012
Abstract
Ion implantation is being used to fabricate silicon-nanocrystal (Si-nc) er-bium-doped slot waveguide structures. Photoluminescence (PL) measurements are used to investigate the luminescent and erbium sensitisation properties while Rutherford backscattering spectrometry (RBS) is used to provide structural information. This study is a preliminary step toward development of active elements for silicon optical interconnects. © 2012 IEEE.