Conference Proceedings
Raman study on the phase transformations of the meta-stable phases of Si induced by indentation
BC Johnson, N Stavrias, B Haberl, LBB Aji, JE Bradby, JC McCallum, JS Williams
Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings COMMAD | IEEE | Published : 2012
Abstract
Raman scattering is used to investigate the metastable Si phases formed by indentation. The indent strain, phase distribution and the kinetics of the phase transformations are examined. © 2012 IEEE.
Grants
Funding Acknowledgements
This work is supported by the ARC.