The effect of gallium implantation on the optical properties of diamond

Abstract

Gallium focused-ion beam milling is a commonly used technique for sculpting diamond at the nano and micro scale. However even at fluences insufficient to cause sputtering, implanted gallium causes modification of the optical properties of the diamond substrate. We implanted 30 keV gallium ions at fluences from 1 × 1013 to 5 × 1014 Ga/cm 2 and studied the effect on the optical properties via spectroscopic ellipsometry (SE), from 0.6 to 6.5 eV, obtaining the changes in refractive index and extinction coefficient in the implanted layer as a function of operating wavelength. Here, we report the first observation of decreased refractive index for a wide spectral range in low fluence implanted dia..