Journal article

Direct measurement and modelling of internal strains in ion-implanted diamond

F Bosia, N Argiolas, M Bazzan, BA Fairchild, AD Greentree, DWM Lau, P Olivero, F Picollo, S Rubanov, S Prawer

JOURNAL OF PHYSICS-CONDENSED MATTER | IOP PUBLISHING LTD | Published : 2013

Abstract

We present a phenomenological model and finite element simulations to describe the depth variation of mass density and strain of ion-implanted single-crystal diamond. Several experiments are employed to validate the approach: firstly, samples implanted with 180 keV B ions at relatively low fluences are characterized using high-resolution x-ray diffraction; secondly, the mass density variation of a sample implanted with 500 keV He ions, well above its amorphization threshold, is characterized with electron energy loss spectroscopy. At high damage densities, the experimental depth profiles of strain and density display a saturation effect with increasing damage and a shift of the damage densit..

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Grants

Awarded by FIRB 'Futuro in Ricerca


Awarded by Australian Research Council


Funding Acknowledgements

The authors wish to thank Dr Paolo Schina for the 180 keV B ion implantation at the Olivetti I-JET facilities of Arnad (Aosta, Italy). This work is supported by the FIRB 'Futuro in Ricerca 2010' project 'RBFR10UAUV', which is gratefully acknowledged. ADG acknowledges the Australian Research Council for financial support (Project No DP0880466).