Direct measurement and modelling of internal strains in ion-implanted diamond

Abstract

We present a phenomenological model and finite element simulations to describe the depth variation of mass density and strain of ion-implanted single-crystal diamond. Several experiments are employed to validate the approach: firstly, samples implanted with 180 keV B ions at relatively low fluences are characterized using high-resolution x-ray diffraction; secondly, the mass density variation of a sample implanted with 500 keV He ions, well above its amorphization threshold, is characterized with electron energy loss spectroscopy. At high damage densities, the experimental depth profiles of strain and density display a saturation effect with increasing damage and a shift of the damage densit..