Journal article
All-graphene planar self-switching MISFEDs, metal-insulator-semiconductor field-effect Diodes
F Al-Dirini, FM Hossain, A Nirmalathas, E Skafidas
Scientific Reports | Published : 2014
DOI: 10.1038/srep03983
Open access
Abstract
Graphene normally behaves as a semimetal because it lacks a bandgap, but when it is patterned into nanoribbons a bandgap can be introduced. By varying the width of these nanoribbons this band gap can be tuned from semiconducting to metallic. This property allows metallic and semiconducting regions within a single Graphene monolayer, which can be used in realising two-dimensional (2D) planar Metal-Insulator-Semiconductor field effect devices. Based on this concept, we present a new class of nano-scale planar devices named Graphene Self-Switching MISFEDs (Metal-Insulator-Semiconductor Field-Effect Diodes), in which Graphene is used as the metal and the semiconductor concurrently. The presented..
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Funding Acknowledgements
Authors would like to thank the NICTA Optics and Nanoelectronics (ONE) group members for your valuable discussions and feedback. F.A. thanks Dana Hirzalla for helping in the production of figures and thanks Christophe Caloz and Woo Young Choi for their valuable discussions and comments. This work was funded by The National ICT Australia - Victorian Research Laboratory (NICTA-VRL), University of Melbourne, Parkville, VIC 3010, Australia.