Solid phase epitaxial regrowth of germanium containing nanoporous structures formed by ion implantation
BC Johnson, L Deam, KK Lee, S Rubanov, JC McCallum, A Cavallini (ed.), SK Estreicher (ed.)
INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013 | AMER INST PHYSICS | Published : 2014
Amorphous germanium (a-Ge) with a porous-germanium surface layer formed by ion implantation is studied. The solid phase epitaxial regrowth kinetics in the a-Ge layer are investigated as well as the structural properties of the amorphous lattice using Raman scattering. The presence of the porous-germanium layer is not found to have a significant impact on the H infiltration into the a-Ge substrate during SPER regrowth. The properties of the lattice within the porous-germanium layer are consistent with that of a highly structurally relaxed a-Ge.
G. Impellizzeri, L. Romano and M. G. Grimaldi are gratefully acknowledged for supplying the samples used in the XTEM study. The Department of Electronic Materials Engineering at the Australian National University is acknowledged for their support by providing access to ion implantation facilities. This work was supported by a grant from the Australian Research Council.