Moving Toward Nano-TCAD Through Multimillion-Atom Quantum-Dot Simulations Matching Experimental Data
Muhammad Usman, Hoon Ryu, Insoo Woo, David S Ebert, Gerhard Klimeck
IEEE TRANSACTIONS ON NANOTECHNOLOGY | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | Published : 2009
Low-loss optical communication requires light sources at 1.5 μm wavelengths. Experiments showed, without much theoretical guidance, that InAs/GaAs quantum dots (QDs) may be tuned to such wavelengths by adjusting the In fraction in an InxGa1-xAs strain-reducing capping layer. In this paper, systematic multimillion-atom electronic structure calculations explain, qualitatively and quantitatively, for the first time, available experimental data. The nanoelectronic modeling NEMO 3-D simulations treat strain in a 15-million-atom system and electronic structure in a subset of ∼9 million atoms using the experimentally given nominal geometries, and without any further parameter adjustments, the simul..View full abstract
Awarded by Fulbright United States Agency for International Development (USAID)
Manuscript received July 13, 2008; revised November 17, 2008. First published January 13, 2009; current version published May 6, 2009. This work was supported in part by the Jet Propulsion Laboratory (JPL), California Institute of Technology, under a contract with the National Aeronautics and Space Administration (NASA). The work of M. Usman was supported by the Fulbright United States Agency for International Development (USAID) under Grant 15054783. The review of this paper was arranged by Associate Editor M. P. Anantram.