Quantum confined stark shift and ground state optical transition rate in [100] laterally biased InAs/GaAs quantum dots

Abstract

The atomistic tight binding simulator NEMO 3-D has previously been validated against the experimental data for quantum dots, wells, and wires in the InGaAlAs and SiGe material systems. Here, we demonstrate our new capability to compute optical matrix elements and transition strengths in tight binding. Systematic multi-million atom electronic structure calculations explore the quantum confined stark shift and the ground state optical transition rate for an electric field in the lateral [100] direction. The simulations treat the strain in a ∼15 million atom system and the electronic structure in a subset of ∼9 million atoms. The effects of the long range strain, the optical polarization anisot..