Memristive in Situ Computing

Abstract

The missing link between a nonlinear circuit element that is able to self-adjust its conductance according to the history of applied voltage/current and physical realizations of two-terminal oxide-based resistive memory was discovered in early 2008, and has since been intensively studied. This class of memory elements is called memristive devices, which includes resistive random access memories (RRAM), phase change memories (PCM) and spin-transfer torque magnetoresistive memories (STT-MRAM). Memristive devices are mostly CMOS and fab friendly, and promise simpler architecture, higher scalability and stackability (3D), good selectivity, relatively low-power consumption, high endurance and ret..