Journal article
Silicon photodetectors integrated with vertical silicon nitride waveguides as image sensor pixels: Fabrication and characterization
T Tut, Y Dan, P Duane, WN Ye, F Degirmenci, Y Yu, M Wober, KB Crozier
Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures | Published : 2014
DOI: 10.1116/1.4868627
Abstract
The current trend toward image sensors with ever-increasing pixel counts is prompting continual reductions in pixel area, leading to significant cross-talk and efficiency challenges. The realization of image sensor pixels containing waveguides presents a means for addressing these issues. The fabrication of such pixels is however not straightforward. Conventional waveguides employed in integrated optics are horizontal, but waveguides needed for the proposed sensor must be vertical and integrated with photodetectors. Here, the authors describe a fabrication process for vertical silicon nitride waveguides integrated with silicon photodetectors. The authors describe the etching, deposition, and..
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Funding Acknowledgements
This work was supported by Zena Technologies and by Harvard University. Fabrication was performed in the Harvard Center for Nanoscale Systems (CNS), which was supported by the National Science Foundation. The authors thank Ling Xie, J. D. Deng, Yuan Lu, Steve Hickman, and David Lange for technical support and invaluable discussions.