Nanofabrication processes for single-ion implantation of silicon quantum computer devices

Abstract

We describe progress in a range of nanofabrication processes for the production of silicon-based quantum computer devices. The processes are based upon single-ion implantation to place phosphorus-31 atoms in accurate locations, precisely self-aligned to metal control gates. These fabrication schemes involve multi-layer resist and metal structures, electron beam lithography and multi-angled aluminium shadow evaporation. The key feature of all fabrication schemes is a gate pattern defined in a resist structure using electron beam lithography, used in conjunction with a second pattern written in another resist layer. The locations where the two patterns overlap define channels down to the subst..