Ion implantation through thin silicon dioxide layers for Si-based solid-state quantum computer device development

Abstract

Ion implantation doping of Si through an SiO2 overlayer is of interest for fabrication of a range of devices on the pathway to the development of a solid-state quantum computer (SSQC). The fabrication requirements of devices based on the Kane architecture typically involve implantation through a pre-exsting thin device-quality thermal oxide at low fluences ∼10 11 cm-2 and ion energies in the range 10 - 20 keV. Here we present results from deep level transient spectroscopy studies of ion-implanted MOS capacitors in which interface-trap densities have been measured in as-grown aid H-passivated thermal oxides and in ion implanted and rapid-thermally processed devices. For thin oxides of 5 nm or..