Level Spectrum Of Single Gated As Donors
GP Lansbergen, R Rahman, J Caro, N Collaert, S Biesemans, G Klimeck, LCL Hollenberg, S Rogge, MJ Caldas (ed.), N Studart (ed.)
AIP Conference Proceedings | AMER INST PHYSICS | Published : 2009
We study the electrical transport through single As donors incorporated in the channel of a FinFET, i.e. a donor in a three-terminal geometry. By means of spectroscopic measurements in conjuction with a NEMO-3D model, we can identify the excited states and associate them with either the donors Coulomb potential, a triangular well at the interface or a hybridized combination of the two. The correspondence between the transport measurements, the theoretical model and the local environment provides an atomic understanding of actual gated donors in a nanostructure. © 2009 American Institute of Physics.